MJE, MJE (PNP). Preferred Device. Complementary Silicon. Plastic Power Transistors. These devices are designed for use as high−frequency. Bipolar (BJT) Transistor PNP V 8A 30MHz 50W Through Hole TOAB. MJE DESCRIPTION. ·With TOC package. ·Complement to type MJE ·High transition frequency. ·DC Current Gain Specified to Amperes.
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MJE Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
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